1 item symbol ratings unit drain-source voltage v ds 450 v dsx *5 450 continuous drain current i d 17 pulsed drain current i d(puls] 68 gate-source voltage v gs 30 repetitive or non-repetitive i ar *2 17 maximum avalanche energy e as *1 221.9 maximum drain-source dv/dt dv ds /dt *4 20 peak diode recovery dv/dt dv/dt *3 5 max. power dissipation p d ta=25 c 1.67 tc=25 c 225 operating and storage t ch +150 temperature range t stg electrical characteristics (t c =25c unless otherwise specified) thermalcharacteristics 2SK3694-01L,s,sj fuji power mosfet n-channel silicon power mosfet features high speed switching low on-resistance no secondary breadown low driving power avalanche-proof applications switching regulators ups (uninterruptible power supply) dc-dc converters maximum ratings and characteristic absolute maximum ratings (tc=25c unless otherwise specified) item symbol test conditions zero gate voltage drain current i dss v ds =450v v gs =0v v ds =360v v gs =0v v gs =30v i d =8.5a v gs =10v i d =8.5a v ds =25v v cc =300v i d =8.5a v gs =10v r gs =10 ? min. typ. max. units v v a na ? s pf nc a v s c ns min. typ. max. units thermal resistance r th(ch-c) channel to case r th(ch-a) channel to ambient 0.556 75.0 c/w c/w symbol v (br)dss v gs(th) i gss r ds(on) g fs c iss c oss c rss td (on) t r td (off) t f q g q gs q gd i av v sd t rr q rr item drain-source breakdown voltaget gate threshold voltage gate-source leakage current drain-source on-state resistance forward transcondutance input capacitance output capacitance reverse transfer capacitance turn-on time t on turn-off time t off total gate charge gate-source charge gate-drain charge avalanche capability diode forward on-voltage reverse recovery time reverse recovery charge test conditions i d = 250 a v gs =0v i d = 250 a v ds =v gs t ch =25c t ch =125c v ds =0v v ds =25v v gs =0v f=1mhz v cc =225v i d =17a v gs =10v l=1.41mh t ch =25c i f =17a v gs =0v t ch =25c i f =17a v gs =0v -di/dt=100a/s t ch =25c v v a a v a mj kv/s kv/s w c c 450 3.0 5.0 25 250 100 0.29 0.38 714 1275 1900 200 300 9.5 14 27 40 27 40 48 72 711 33 50 913 10.5 16 17 1.20 1.80 0.57 6.5 -55 to +150 outline drawings [mm] equivalent circuit schematic super f ap-g series *3 i f -i d , -di/dt=50a/s, vcc bv dss , tch 150c = < = < = < t-pack gate(g) source(s) drain(d) 200305 *4 vds 450v *5 v gs =-30v < = *1 l=1.41mh, vcc=45v, tch=25c see to avalanche energy graph *2 tch 150c = < p4
2 characteristics 2SK3694-01L,s,sj fuji power mosfet 0 255075100125150 0 50 100 150 200 250 300 allowable power dissipation pd=f(tc) pd [w] tc [ c] 048121620 0 5 10 15 20 25 30 20v 10v 8v 7.5v 7.0v id [a] vds [v] typical output characteristics id=f(vds):80 s pulse test,tch=25 c vgs=6.5v 012345678910 0.1 1 10 id[a] vgs[v] typical transfer characteristic id=f(vgs):80 s pulse test,vds=25v,tch=25 c 0.1 1 10 1 10 gfs [s] id [a] typical transconductance gfs=f(id):80 s pulse test,vds=25v,tch=25 c 0 5 10 15 20 25 30 35 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 rds(on) [ ? ] id [a] typical drain-source on-state resistance rds(on)=f(id):80 s pulse test,tch=25 c 10v 20v 8v 7.5v 7.0v vgs=6.5v -50 -25 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 rds(on) [ ? ] tch [ c] typ. max. drain-source on-state resistance rds(on)=f(tch):id=8.5a,vgs=10v
3 2SK3694-01L,s,sj fuji power mosfet 0 5 10 15 20 25 30 35 40 45 50 0 2 4 6 8 10 12 14 qg [nc] typical gate charge characteristics vgs=f(qg):id=17a,tch=25 c vgs [v] 360v 225v vcc= 90v 10 -1 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 c [nf] vds [v] typical capacitance c=f(vds):vgs=0v,f=1mhz crss coss ciss 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0.1 1 10 if [a] vsd [v] typical forward characteristics of reverse diode if=f(vsd):80 s pulse test,tch=25 c 10 -1 10 0 10 1 10 0 10 1 10 2 10 3 typical switching characteristics vs. id t=f(id):vcc=300v,vgs=10v,rg=10 ? td(on) tr tf td(off) t [ns] id [a] 0 25 50 75 100 125 150 0 100 200 300 400 500 600 i as =7a i as =11a i as =17a e as [mj] starting tch [ c] maximum avalanche energy vs. starting tch e as =f(starting tch):vcc=45v -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. gate threshold voltage vs. tch vgs(th)=f(tch):vds=vgs,id=1ma vgs(th) [v] tch [ c]
4 2SK3694-01L,s,sj fuji power mosfet 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -2 10 -1 10 0 10 1 10 2 single pulse maximum avalanche current pulsewidth i av =f(t av ):starting tch=25 c,vcc=45v avalanche current i av [a] t av [sec] 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -3 10 -2 10 -1 10 0 10 1 maximum transient thermal impedance zth(ch-c)=f(t):d=0 zth(ch-c) [c/w] t [sec] http://www.fujielectric.co.jp/denshi/scd/ outline drawings (mm) type(s) type(sj) 1 2 3 1 2 3 type(l) 1 2 3 1 2 3 4 4
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